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| PF0075A MOS FET Power Amplifier Module for AMPS Handy Phone ADE-208-341C (Z) Product preview 4th. Edition July 1996 Features * * * * 2 stage amplifier High efficiency: 55% Typ at 1.2 W Low power control current: 500 A Reflowable surface mounted small package: 0.6 cc Pin Arrangement * RF-H1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND 5 5 1 2 3 4 PF0075A Internal Diagram and External Circuit Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout Z1 C1 FB1 C3 FB2 C2 Z2 Pin VAPC VDD Pout C1 = C2 = 0.01 F (Ceramic chip capacitor) C3 = 4.7 F (Tantalum) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 (Microstrip line) Absolute Maximum Ratings (Tc = 25C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Symbol VDD IDD VAPC Pin Tc (op) Tstg Rating 10 1.5 7 40 Unit V A V mW C C -30 to +100 -30 to +100 PF0075A Electrical Characteristics (Tc = 25C) Item Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power Symbol IDS T 2nd H.D. 3rd H.D. Min Typ Max 100 Unit A % dBc dBc Test Condition VDD = 10 V, VAPC = 0 V, Rg = Rl = 50 f = 824, 849 MHz, Pin = +7 dBm, VDD = 4.8 V, Rg = Rl = 50 Pout = 1.2 W (at APC controlled) -- 50 -- 55 -- -30 -30 3 -- -- -40 -40 2 1.4 VSWR (in) -- Pout 1.25 -- W f = 824, 849 MHz, Pin = +7 dBm, VDD = 4.8 V, VAPC = 4 V, Rg = Rl = 50 f = 824, 849 MHz, Pin = +7 dBm, VDD = 4.8 V, VAPC = 0.5 V, Rg = Rl = 50 f = 824 to 849 MHz, Pin = +7 dBm, VDD = 4.3V to 6 V, Pout 1.3 W, Rg = 50 , Load VSWR = 3:1 All phases -- Isolation -- -- -10 +6 dBm Stability -- No parasitic oscillation -- PF0075A Characteristics Curve Pout vs. Pin 2.5 824 MHz 836.5 MHz 849 MHz Output Power Pout (W) VDD = 4.8 V VAPC = 4 V Tc = 25 C 2.0 1.5 1.0 0 0.5 1.5 2 Input Power Pin (mW) Pout vs. VAPC 824 MHz 836.5 MHz 849 MHz Pin = +7 dBm VDD = 4.8 V Tc = 25 C 2.0 Output Power Pout (W) 1.0 0 0 1 2 Apc Voltage VAPC (V) 3 4 PF0075A ID vs. VAPC 800 824 MHz 836.5 MHz 849 MHz Supply Current ID (mA) 600 Pin = +7 dBm VDD = 4.8 V Tc = 25 C 400 200 0 0 1 2 Apc Voltage VAPC (V) 3 4 ID vs. VDD 900 f = 849 MHz Pin = +7 dBm Pout = 1 W (VAPC 4 V) Tc = 25 C 800 Supply Current ID (mA) 700 600 500 400 300 3.6 3.8 4.0 4.2 4.4 4.6 4.8 Supply Voltage VDD (V) PF0075A Pout vs. VDD 1.5 f = 849 MHz Pin = +7 dBm VAPC = 3.4 V Tc = 25 C Output Power Pout (W) 1.0 0.5 0 3.6 3.8 4.0 4.2 4.4 4.6 4.8 Supply Voltage VDD (V) Isolation vs. VAPC (1) +30 f = 824 MHz VDD = 4.8 V +20 Pin = +9 dBm Isolation (dBm) +10 0 +7 dBm -10 -20 0 0.2 0.4 0.6 0.8 1.0 Apc Voltage VAPC (V) PF0075A Isolation vs. VAPC (2) +30 f = 849 MHz VDD = 4.8 V +20 Pin = +9 dBm Isolation (dBm) +10 0 +7 dBm -10 -20 0 0.2 0.4 0.6 0.8 1.0 Apc Voltage VAPC (V) IAPC vs. VAPC 5 4 Apc Current IAPC (V) 3 2 1 0 0 2 4 Apc Voltage VAPC (V) 6 8 PF0075A Package Dimensions Unit: mm 20 }0.3 (1.5) (17 ) (1.5) (1.7 ) 3.0MAX. (0.3) 12 }0.5 2.35 }0.5 (0.25) (4 - 3.0) 1 2 34 (1.8) (5.1) (5.1) (2.5) (2.5) (0.5) Hitachi code EIAJ code JEDEC code RF-H1 -- -- (7.5) |
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